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| HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 F (Z) 7th. Edition December. 1996 Features * * * * Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 8 5 76 56 7 8 DD D D 3 12 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 HAT1020R Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID(pulse)Note1 Ratings -30 20 -5 -40 -5 2.5 150 -55 to +150 Unit V V A A A W C C Body-drain diode reverse drain current IDR Channel dissipation Channel temperature Storage temperature Note: Pch Note2 Tch Tstg 1. PW 10s, duty cycle 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current IGSS IDSS -- -- -1.0 -- -- 5.0 -- -- -- -- -- -- -- -- -- -- -- 0.04 0.07 7.5 860 560 165 30 170 40 65 -0.9 10 -10 -2.5 0.07 0.13 -- -- -- -- -- -- -- -- -1.4 A A V S pF pF pF ns ns ns ns V IF = -5A, VGS = 0 Note3 VGS = 16V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10V, I D = -1mA ID = -3A, VGS = -10V Note3 ID = -3A, VGS = -4V Note3 ID = -3A, VDS = -10V Note3 VDS = -10V VGS = 0 f = 1MHz VGS = -4V, ID = -3A VDD A -10V V(BR)GSS 20 -- -- V IG = 100 A, VDS = 0 Symbol Min Typ -- Max -- Unit V Test Conditions ID = -10mA, VGS = 0 V(BR)DSS -30 Gate to source cutoff voltage VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time trr td(on) tr td(off) tf VDF -- 55 -- ns IF = -5A, VGS = 0 diF/ dt =20A/s HAT1020R Main Characteristics Power vs. Temperature Derating 4.0 Pch (W) Maximum Safe Operation Area -100 I D (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 10 s 100 s 1m -30 -10 -3 -1 -0.3 -0.1 Ta = 25 C 1 shot pulse DC PW s Op Drain Current Channel Dissipation er = ati 10 2.0 on m s Operation in this area is limited by R DS(on) (P W Note <4 1 0s ) 1.0 -0.03 0 50 100 150 Ta (C) 200 Ambient Temperature -0.01 -1 -3 -10 -30 -100 -0.1 -0.3 Drain to Source Voltage V DS (V) Note 4 : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics -20 -10 V -6 V -5 V -4.5 V -20 -4 V (A) Typical Transfer Characteristics V DS = -10 V Pulse Test -16 I D (A) -16 Pulse Test -3.5 V ID Drain Current -12 -12 Drain Current -8 -3 V -8 -4 VGS = -2.5 V -4 75 C -1 -2 -3 Gate to Source Voltage Tc = -25 C 25 C 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 -4 -5 V GS (V) HAT1020R Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) -0.5 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 VGS = -4 V -0.4 -0.3 I D = -5 A -0.2 -2 A -1 A 0 -6 -2 -4 Gate to Source Voltage -10 V GS (V) -8 0.05 -10 V -0.1 0.02 0.01 -0.2 -0.5 -1 -2 Drain Current -5 -10 -20 I D (A) Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 I D = -5 A V GS = -4 V 0.08 -2 A, -1 A Forward Transfer Admittance vs. Drain Current 20 10 5 75 C 2 1 0.5 0.2 -0.2 V DS = -10 V Pulse Test -0.5 -1 -2 -5 -10 -20 Drain Current I D (A) 25 C Tc = -25 C 0.12 0.04 -10 V 0 -40 -5 A, -2 A, -1 A 0 40 80 120 160 Case Temperature Tc (C) HAT1020R Body-Drain Diode Reverse Recovery Time 500 10000 3000 1000 300 Crss 100 30 10 0 -10 -20 -30 Ciss Coss Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 100 50 20 10 5 -0.2 di / dt = 20 A / s VGS = 0, Ta = 25 C -0.5 -1 -2 -5 -10 -20 Reverse Drain Current I DR (A) Capacitance C (pF) 200 VGS = 0 f = 1 MHz -40 -50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) Switching Time t (ns) -10 V DD = -5 V -10 V -25 V V GS (V) 0 0 500 Switching Characteristics -4 200 100 50 tr tf t d(off) t d(on) Drain to Source Voltage -20 V DS V DD = -25 V -10 V -5 V I D = -5 A V GS -8 -30 -12 Gate to Source Voltage 20 10 -40 -50 0 -16 -20 40 8 16 24 32 Gate Charge Qg (nc) 5 -0.1 -0.2 V GS = -4 V, V DD = -10 V PW = 3 s, duty < 1 % -0.5 -1 Drain Current -2 -5 I D (A) -10 HAT1020R Reverse Drain Current vs. Source to Drain Voltage -20 Pulse Test Reverse Drain Current I DR (A) -16 V GS = -5 V -12 -8 0, 5 V -4 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 ch - f(t) = s (t) * ch - f ch - f = 83.3 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) ls pu e PDM PW T 0.001 1sh ot D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 1000 Pulse Width PW (S) HAT1020R Package Dimensions Unit: mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP-8DA -- MS-012AA |
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